PART |
Description |
Maker |
BB814 BB814-1 BB814-2 |
Small signal capacitance diode for frequency tuning in FM radio tuners Silicon Epitaxial Planar Dual Capacitance Diode From old datasheet system
|
Vishay Telefunken Vishay Siliconix
|
HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
|
Renesas Electronics Corporation
|
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
BB565 Q62702-B0873 Q62702-B0869 |
From old datasheet system Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
|
SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
|
NXP Semiconductors N.V. Philipss Philips Semiconductors
|
HVU363B |
Diodes>Variable Capacitance Variable Capacitance Diode for TV tuner
|
Renesas Electronics Corporation
|
NP0080TAT1G NP0120TAT1G NP0160TAT1G NP0080TA |
Low Voltage Low Capacitance Surge Protection Device Low Capacitance Protector
|
ON Semiconductor
|